– GaAs electron mobility is around six times that of silicon
– Higher speeds are also indirectly realized from the larger GaAs
– band gap (1.424eV) vs. that of Si(1.1eV); this results
– in reduced parasitic capacitance within the device.
– These properties make GaAs devices ideal candidates
– for high frequency and high-temperature applications in
– broadband telecommunications, data and optical
– communications, and for solar cells.