GaAs

GaAs WAFER

Characteristic

– GaAs electron mobility is around six times that of silicon
– Higher speeds are also indirectly realized from the larger GaAs
– band gap (1.424eV) vs. that of Si(1.1eV); this results
– in reduced parasitic capacitance within the device.
– These properties make GaAs devices ideal candidates
– for high frequency and high-temperature applications in
– broadband telecommunications, data and optical
– communications, and for solar cells.

Application

– Aerospace and military applications
– Their ability to operate at very high frequencies and power despite extreme temperatures
– and radiation was required
– high volume commercial applications
– cellular phones and other wireless applications, which require operating frequencies
– that are difficult to achieve with silicon-based devices.
– GaAs optoelectronic devices

Specification

Type1Semi-Insulating(SI)Semi-Conducting(SC)
DopantUndoppedP(Zn) / N(Si, Te)
Diameter2", 3", 4"2", 3", 4"
Orientation100, 110100, 110
Resistivity>1E7 ohm>1E-3 ohm
Hall Mobility>6000>1500
Carrier Concentration-<5E4
Etch Pit Density<10000<5e4(2"),<1e5(3"),<1.5e5(4”)
Thickness625±25um(2")
625±25um(3")
625±25um(4")
350~650±20um(2")
500~625±25um(3")
500~625±25um(4")
SurfaceOne Side PolishedOne Side Polished
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