GaAs
GaAs WAFER
Characteristic
– GaAs electron mobility is around six times that of silicon
– Higher speeds are also indirectly realized from the larger GaAs
– band gap (1.424eV) vs. that of Si(1.1eV); this results
– in reduced parasitic capacitance within the device.
– These properties make GaAs devices ideal candidates
– for high frequency and high-temperature applications in
– broadband telecommunications, data and optical
– communications, and for solar cells.
Application
– Aerospace and military applications
– Their ability to operate at very high frequencies and power despite extreme temperatures
– and radiation was required
– high volume commercial applications
– cellular phones and other wireless applications, which require operating frequencies
– that are difficult to achieve with silicon-based devices.
– GaAs optoelectronic devices
Specification
| Type1 | Semi-Insulating(SI) | Semi-Conducting(SC) |
| Dopant | Undopped | P(Zn) / N(Si, Te) |
| Diameter | 2", 3", 4" | 2", 3", 4" |
| Orientation | 100, 110 | 100, 110 |
| Resistivity | >1E7 ohm | >1E-3 ohm |
| Hall Mobility | >6000 | >1500 |
| Carrier Concentration | - | <5E4 |
| Etch Pit Density | <10000 | <5e4(2"),<1e5(3"),<1.5e5(4”) |
| Thickness | 625±25um(2") 625±25um(3") 625±25um(4") | 350~650±20um(2") 500~625±25um(3") 500~625±25um(4") |
| Surface | One Side Polished | One Side Polished |