SAPPHIRE

SAPPHIRE WAFER & SUBSTRATE

Characteristic

– Stability in low & high temperature(melting point : 2400°C)
– Superior mechanical properties(Extreme hardness)
– High thermal conductivity
– High transmittance of light

Application

Optical Component
Optical flats, window, filter, prisms, aperture,covers for electric cells, laser rods, ect

Sapphire Substrate 
For GaN, other III-V & II-VI compound
For IR Detectors
For High TeSuperconductors and High Frequency Dielectrics
For high speed IC’s and pressure transducers
For SOS(Silicon On Sapphire)

Window
For visible and IR
For inspection plate for high temperature & pressure furnace
For prism, optical plate
For sapphire watch glasses

Specification

Diameter2", 3", 4"
Orientation0001(C-axis), 1012(R-axis) ± 1°, 0.5°, 0.25°, 0.1°
Reference Flat Orientation1120(A-axis), 1010(M-axis)
Reference Flat Length16±1mm, 22±1mm, 32.5±1mm
Secondary Flat Length8±1mm, 11±1mm, 15±1mm
Thickness330~380um(2"), 430(3"), 435~500um(4") & Adjustable
SurfaceOne side polished, Two side polished
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