SILICON

SILICON WAFER & IGNOT

Silicon Wafer Product │ 제품

Diameter2"3"4"5"6"8"12"
Thickness(SEMI)Standard / Special
Resistivity0.001 ~ 100,000 Ohm Cm
Growth MethodCZ, FZ
GradePrime, Normal Test, Low Test, Dummy
Type/DopantP(Boron), N (Phos, Antimony, Arsenic)
Type/DopantP(Boron), N (Phos, Antimony, Arsenic)
Orientation100, 111, 110
SurfaceSingle or Double side polished

Silicon Wafer Service │ 공정 서비스

ServiceTypeSpec
Oxidation
(4" / 6" / 8" / 12")
Dry1,000Å / 2,000Å / 3,000Å
Wet3,000Å / 5,000Å / 1um / 1.2um / 1.5um / 2um
NitrideNormal1,000Å / 2,000Å / 3,000Å
Low stress5000Å / 7000Å / 1um / 1.2um / 1.5um / 2um
SputterAl-1%Si1000 Å / 2000 Å / 3000 Å / 5000 Å / 7000 Å /
1um
Cu/Ti1000/500 Å, 2000/500 Å, 3000/500 Å, 5000/500 Å, 7000/500 Å, 1um/500 Å
W/Ti
1000/500 Å, 2000/500 Å, 3000/500 Å, 5000/500 Å, 7000/500 Å, 1um/500 Å
후공정(Si)Polishingbare / Oxidation
Grinding &
Lapping
200um 이하 / 400um 이하 / 400um 초과
Grinding &
Lapping &
polishing
200um 이하 / 400um 이하 / 400um 초과
Dicing(Si)
(4" / 6" / 8")
Pattern 유 / 무
CleaningChemical BOE / SC1

Silicon Ingot

Growth MethodCZ, FZ
DiameterFrom 50mm up to 300mm
GradePrime / Test / Dummy
TypeP(Boron) / N(Phos)
Orientation100, 110, 111
LengthOrder made
ResistivityOrder made
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