SILICON
SILICON WAFER & IGNOT
Silicon Wafer Product │ 제품
| Diameter | 2" | 3" | 4" | 5" | 6" | 8" | 12" |
|---|---|---|---|---|---|---|---|
| Thickness(SEMI) | Standard / Special | ||||||
| Resistivity | 0.001 ~ 100,000 Ohm Cm | ||||||
| Growth Method | CZ, FZ | ||||||
| Grade | Prime, Normal Test, Low Test, Dummy | ||||||
| Type/Dopant | P(Boron), N (Phos, Antimony, Arsenic) | ||||||
| Type/Dopant | P(Boron), N (Phos, Antimony, Arsenic) | ||||||
| Orientation | 100, 111, 110 | ||||||
| Surface | Single or Double side polished | ||||||
Silicon Wafer Service │ 공정 서비스
| Service | Type | Spec |
|---|---|---|
| Oxidation (4" / 6" / 8" / 12") | Dry | 1,000Å / 2,000Å / 3,000Å |
| Wet | 3,000Å / 5,000Å / 1um / 1.2um / 1.5um / 2um | |
| Nitride | Normal | 1,000Å / 2,000Å / 3,000Å |
| Low stress | 5000Å / 7000Å / 1um / 1.2um / 1.5um / 2um | |
| Sputter | Al-1%Si | 1000 Å / 2000 Å / 3000 Å / 5000 Å / 7000 Å / 1um |
| Cu/Ti | 1000/500 Å, 2000/500 Å, 3000/500 Å, 5000/500 Å, 7000/500 Å, 1um/500 Å | |
| W/Ti | 1000/500 Å, 2000/500 Å, 3000/500 Å, 5000/500 Å, 7000/500 Å, 1um/500 Å | |
| 후공정(Si) | Polishing | bare / Oxidation |
| Grinding & Lapping | 200um 이하 / 400um 이하 / 400um 초과 | |
| Grinding & Lapping & polishing | 200um 이하 / 400um 이하 / 400um 초과 | |
| Dicing(Si) (4" / 6" / 8") | Pattern | 유 / 무 |
| Cleaning | Chemical | BOE / SC1 |
Silicon Ingot
| Growth Method | CZ, FZ |
| Diameter | From 50mm up to 300mm |
| Grade | Prime / Test / Dummy |
| Type | P(Boron) / N(Phos) |
| Orientation | 100, 110, 111 |
| Length | Order made |
| Resistivity | Order made |